BUK9609-55A,118 NXP Semiconductors, BUK9609-55A,118 Datasheet - Page 7

MOSFET N-CH 55V 75A D2PAK

BUK9609-55A,118

Manufacturer Part Number
BUK9609-55A,118
Description
MOSFET N-CH 55V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9609-55A,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
4633pF @ 25V
Power - Max
211W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
108 A
Power Dissipation
211 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057019118
BUK9609-55A /T3
BUK9609-55A /T3
Philips Semiconductors
9397 750 09229
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V GS(th)
g fs
(S)
(V)
I
T
D
j
100
2.5
1.5
0.5
= 1 mA; V
= 25 C; V
75
50
25
2
1
0
0
junction temperature.
drain current; typical values.
-60
0
DS
DS
= V
= 25 V
0
GS
20
max
min
typ
60
40
120
I D (A)
T j (
03aa33
03nh61
°
C)
Rev. 01 — 21 February 2002
180
60
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
(A)
I D
T
V
9000
6000
3000
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
GS
= 25 C; V
0
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
10 -2
0
C oss
C rss
DS
= V
10 -1
BUK95/9609-55A
GS
1
C iss
min
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
1
typ
2
max
10
V GS (V)
V DS (V)
03aa36
03nh66
10 2
3
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