BUK9Y19-55B,115 NXP Semiconductors, BUK9Y19-55B,115 Datasheet - Page 4

MOSFET N-CH 55V 46A LFPAK

BUK9Y19-55B,115

Manufacturer Part Number
BUK9Y19-55B,115
Description
MOSFET N-CH 55V 46A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9Y19-55B,115

Package / Case
LFPak-4
Mounting Type
Surface Mount
Power - Max
85W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
18nC @ 5V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
46A
Drain To Source Voltage (vdss)
55V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.3 mOhm @ 20A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0173 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
46 A
Power Dissipation
85000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058366115::BUK9Y19-55B T/R::BUK9Y19-55B T/R
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9Y19-55B_3
Product data sheet
Symbol
R
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
(A)
10
10
I
D
10
10
-1
-1
-2
3
2
1
1
T
10
mb
1
-6
δ = 0.5
0.2
0.05
0.02
Thermal characteristics
0.1
= 25 °C; I
single shot
Parameter
thermal resistance
from junction to
mounting base
DM
is single pulse
10
Limit R
-5
DSon
= V
Conditions
see
DS
/ I
D
Figure 5
10
-4
Rev. 03 — 29 February 2008
10
10
-3
10
Min
-
N-channel TrenchMOS logic level FET
-2
V
DS
(V)
DC
BUK9Y19-55B
Typ
-
10
P
-1
t
p
t p = 10 μs
100 μs
1 ms
10 ms
100 ms
T
t
Max
1.8
© NXP B.V. 2008. All rights reserved.
p
(s)
δ =
03nm00
03nm01
t
T
p
t
10
1
2
Unit
K/W
4 of 12

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