BUK9Y19-55B,115 NXP Semiconductors, BUK9Y19-55B,115 Datasheet
BUK9Y19-55B,115
Specifications of BUK9Y19-55B,115
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BUK9Y19-55B,115 Summary of contents
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... BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 — 29 February 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... °C; see T Figure 2 mb ≤ Ω sup °C; unclamped T j(init) see Figure ° ≤ 10 μs; pulsed ° Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET Graphic symbol mbb076 Min Max - -15 15 and Figure 4 - 184 - 85 -55 175 ...
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... Fig 2. Normalized total power dissipation as a function of mounting base temperature (1) AL (A) 10 (2) ( Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET 03na19 50 100 150 T (° tot = × 100 % P tot ( 25°C ) 03np79 10 t (ms) AL © NXP B.V. 2008. All rights reserved. 200 ...
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... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9Y19-55B_3 Product data sheet = Conditions see Figure Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET 03nm00 μs 100 μ 100 (V) DS Min Typ Max - - 1.8 03nm01 δ ...
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... GS j see Figure /dt = -100 A/μ - ° °C; see T Figure ° MHz see Figure 15 = 1.2 Ω Ω G(ext ° Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET Min Typ Max 2.3 1.1 1 500 - 0. 100 - 2 100 - - 21 - 14.3 17 0.85 1 ...
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... DS T Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values 03ng53 (S) 30 max ( Fig 9. Forward transconductance as a function of drain current; typical values Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET 03np28 ( ° 03np15 °C;V = 25V j DS © NXP B.V. 2008. All rights reserved. ...
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... Fig 11. Gate-source threshold voltage as a function of junction temperature 03np30 2.4 a 5.0 1.6 0 −60 80 120 I ( Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET 03ng52 max typ min 0 60 120 T (° A 03nb25 0 60 120 T (°C) ...
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... Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 100 175 ° ° 0.3 0.6 0.9 Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET 03np31 C iss C oss C rss − ( 03np13 1.2 V (V) SD © NXP B.V. 2008. All rights reserved. 2 ...
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... D 1 (1) ( max 2.2 0.9 0.25 0.30 4.10 5.0 4.20 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 ...
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... BUK9Y19-55B_3 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Product data sheet - Product data sheet - Rev. 03 — 29 February 2008 BUK9Y19-55B Supersedes BUK9Y19-55B_2 BUK9Y19-55B-01 - © NXP B.V. 2008. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 29 February 2008 BUK9Y19-55B N-channel TrenchMOS logic level FET © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 February 2008 Document identifier: BUK9Y19-55B_3 All rights reserved. ...