BUK9Y19-55B,115 NXP Semiconductors, BUK9Y19-55B,115 Datasheet - Page 3

• Manufacturer Part Number: BUK9Y19-55B,115
• Description: MOSFET N-CH 55V 46A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y19-55B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 46A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0173 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 46 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058366115::BUK9Y19-55B T/R::BUK9Y19-55B T/R

NXP Semiconductors
BUK9Y19-55B_3
Product data sheet
Fig 1. Continuous drain current as a function of
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
(A)
I
50
40
30
20
10
D
0
V
mounting base temperature
(1) Single pulse;T
(2) Single pulse;T
(3) Repetitive.
GS
0
5V
50
j
j
= 25 °C.
= 150 °C.
100
10
10
(A)
I
10
AL
-1
150
2
1
10
-3
T
mb
03nl99
(°C)
Rev. 03 — 29 February 2008
200
10
-2
10
-1
Fig 2. Normalized total power dissipation as a
(1)
(2)
(3)
P
(%)
der
120
80
40
0
1
P
function of mounting base temperature
0
der
t
AL
03np79
(ms)
=
P
N-channel TrenchMOS logic level FET
tot ( 25°C )
P
10
50
tot
× 100 %
BUK9Y19-55B
100
150
© NXP B.V. 2008. All rights reserved.
T
mb
03na19
(°C)
200
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