BUK9Y19-55B,115 NXP Semiconductors, BUK9Y19-55B,115 Datasheet - Page 10

• Manufacturer Part Number: BUK9Y19-55B,115
• Description: MOSFET N-CH 55V 46A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y19-55B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 46A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0173 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 46 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058366115::BUK9Y19-55B T/R::BUK9Y19-55B T/R

NXP Semiconductors
8. Revision history
Table 7.
BUK9Y19-55B_3
Product data sheet
Document ID
BUK9Y19-55B_3
Modifications:
BUK9Y19-55B_2
BUK9Y19-55B-01
(9397 750 13188)
Revision history
Release date
20080229
20060411
20040528
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 03 — 29 February 2008
Change notice
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-
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N-channel TrenchMOS logic level FET
BUK9Y19-55B
Supersedes
BUK9Y19-55B_2
BUK9Y19-55B-01
-
© NXP B.V. 2008. All rights reserved.
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