PSMN006-20K,518 NXP Semiconductors, PSMN006-20K,518 Datasheet - Page 8

• Manufacturer Part Number: PSMN006-20K,518
• Description: MOSFET N-CH 20V 32A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN006-20K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 32nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 32 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057032518; PSMN006-20K /T3; PSMN006-20K /T3

Philips Semiconductors
9397 750 09631
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
30
20
10
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.2
T j = 150 C
0.4
GS
= 0 V
0.6
0.8
25 C
V SD (V)
03ai67
1
Rev. 01 — 30 May 2002
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 30 A; V
5
4
3
2
1
0
charge; typical values.
0
V DD = 10 V
I D = 30 A
T j = 25 C
DD
= 10 V
20
TrenchMOS™ ultra low level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PSMN006-20K
40
60
Q G (nC)
03ai69
80
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