PSMN006-20K,518 NXP Semiconductors, PSMN006-20K,518 Datasheet - Page 3

• Manufacturer Part Number: PSMN006-20K,518
• Description: MOSFET N-CH 20V 32A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN006-20K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 32nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 32 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057032518; PSMN006-20K /T3; PSMN006-20K /T3

Philips Semiconductors
9397 750 09631
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
(A)
P der
P
I D
(%)
10 -1
120
sp
der
10 2
80
40
10
0
1
function of solder point temperature.
= 25 C; I
10 -1
0
=
Limit R DSon = V DS / I D
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse.
100%
100
150
T sp ( C)
1
03aa17
200
DC
Rev. 01 — 30 May 2002
Fig 2. Normalized continuous drain current as a
I der
I
(%)
der
120
80
40
0
function of solder point temperature.
=
0
-------------------
I
D 25 C
10
I
D
50
TrenchMOS™ ultra low level FET
100%
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
t p = 10 s
1 ms
10 ms
100 ms
PSMN006-20K
100
V DS (V)
150
T sp ( C)
03ai63
03aa25
200
10 2
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