PSMN006-20K,518 NXP Semiconductors, PSMN006-20K,518 Datasheet - Page 6

• Manufacturer Part Number: PSMN006-20K,518
• Description: MOSFET N-CH 20V 32A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN006-20K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 700mV @ 1mA
• Gate Charge (qg) @ Vgs: 32nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 32 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 90 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057032518; PSMN006-20K /T3; PSMN006-20K /T3

Philips Semiconductors
9397 750 09631
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
j
j
I D
= 25 C
= 25 C
30
20
10
10
0
8
6
4
2
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.05
10
0.1
4.5 V
2.5 V
20
0.15
2 V
V GS = 1.5 V
V GS = 1 V
I D (A)
V DS (V)
03ai64
03ai65
2.5 V
4.5 V
1.5 V
1.3 V
1.1 V
2 V
0.2
30
Rev. 01 — 30 May 2002
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
a
j
I D
1.5
0.5
= 25 C and 150 C; V
=
30
20
10
2
1
0
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
0.4
0
T j = 150 C
TrenchMOS™ ultra low level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
PSMN006-20K
0.8
60
> I
D
x R
25 C
DSon
120
1.2
V GS (V)
T j ( C)
03ai66
03af18
180
1.6
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