BUK7575-55A,127 NXP Semiconductors, BUK7575-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK7575-55A,127
• Description: MOSFET N-CH 55V 20.3A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 483pF @ 25V
• Power - Max: 62W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20.3 A
• Power Dissipation: 62000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056259127; BUK7575-55A; BUK7575-55A

Table 5:
T
Philips Semiconductors
9397 750 07696
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
60
I D
50
40
30
20
10
R DSon
Characteristics
(A)
0
(m )
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
180
160
140
120
100
0
80
60
40
0
p
= 300 s
5.5
2
10
6 6.5 7
4
…continued
V GS (V) =
20
6
8
16 14
30
V GS (V) =
8
V DS (V)
40
Conditions
I
Figure 15
I
V
10
20
S
S
GS
I D (A)
03nc10
= 25 A; V
= 20 A; dI
10
12
= 10 V; V
10.5
9.5
8.5
7.5
6.5
5.5
4.5
Rev. 01 — 8 December 2000
50
GS
S
BUK7575-55A; BUK7675-55A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
R DSon
a
--------------------------- -
R
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
(m )
DSon 25 C
2
1
0
R
160
140
120
100
-60
80
60
40
DSon
D
Min
5
= 25 A
-20
TrenchMOS™ standard level FET
20
10
Typ
0.85
32
120
60
© Philips Electronics N.V. 2000. All rights reserved.
100
15
140
Max
1.2
T
V GS (V)
j
(
03aa28
o
C)
180
20
Unit
V
ns
nC
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