BUK7575-55A,127 NXP Semiconductors, BUK7575-55A,127 Datasheet - Page 5

• Manufacturer Part Number: BUK7575-55A,127
• Description: MOSFET N-CH 55V 20.3A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 483pF @ 25V
• Power - Max: 62W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20.3 A
• Power Dissipation: 62000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056259127; BUK7575-55A; BUK7575-55A

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07696
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 0 V; V
= 30 V; R
= 10 V; R
Rev. 01 — 8 December 2000
and
Figure 12
BUK7575-55A; BUK7675-55A
DS
DS
D
8
GS
L
G
= 10 A;
DS
= V
GS
= 25 V;
= 1.2 ;
= 10 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
55
50
2
1
TrenchMOS™ standard level FET
Typ
3
0.05
2
64
320
92
64
10
50
70
40
4.5
3.5
2.5
7.5
© Philips Electronics N.V. 2000. All rights reserved.
Max
4
4.4
10
500
100
75
150
483
113
90
Unit
V
V
V
V
V
nA
m
m
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A