BUK7575-55A,127 NXP Semiconductors, BUK7575-55A,127 Datasheet - Page 11

MOSFET N-CH 55V 20.3A TO220AB

BUK7575-55A,127

Manufacturer Part Number
BUK7575-55A,127
Description
MOSFET N-CH 55V 20.3A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7575-55A,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
20.3A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
483pF @ 25V
Power - Max
62W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20.3 A
Power Dissipation
62000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056259127
BUK7575-55A
BUK7575-55A
10. Soldering
Philips Semiconductors
9397 750 07696
Product specification
Fig 18. Reflow soldering footprint for SOT404.
Dimensions in mm.
handbook, full pagewidth
8.15
7.95
4.85
8.35
solder lands
solder resist
occupied area
solder paste
2.25
4.60
2.15
1.50
0.30
3.00
1.50
Rev. 01 — 8 December 2000
BUK7575-55A; BUK7675-55A
10.85
10.60
10.50
7.50
7.40
5.08
1.20
1.30
1.55
1.70
MSD057
0.20
TrenchMOS™ standard level FET
5.40
8.275
8.075
© Philips Electronics N.V. 2000. All rights reserved.
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