BUK7575-55A,127 NXP Semiconductors, BUK7575-55A,127 Datasheet - Page 3

• Manufacturer Part Number: BUK7575-55A,127
• Description: MOSFET N-CH 55V 20.3A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7575-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 483pF @ 25V
• Power - Max: 62W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20.3 A
• Power Dissipation: 62000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056259127; BUK7575-55A; BUK7575-55A

Philips Semiconductors
9397 750 07696
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der (%)
= 25 C; I
=
----------------------
P
120
100
80
60
40
20
tot 25 C
0
P
0
tot
DM
25
single pulse.
100%
50
10 -1
10 3
10 2
75
I D
10
(A)
1
1
100
P
t p
125
T
R DSon = V DS / I D
150
T mb ( o C)
=
t p
T
175
t
03na19
Rev. 01 — 8 December 2000
200
BUK7575-55A; BUK7675-55A
Fig 2. Normalized continuous drain current as a
10
D.C.
V
I
der
GS
function of mounting base temperature.
I der
=
(%)
4.5 V
------------------ -
I
D 25 C
120
100
80
60
40
20
I
0
D
0
25
100%
TrenchMOS™ standard level FET
50
V DS (V)
75
t p = 10 us
100 us
1 ms
10 ms
100 ms
100
© Philips Electronics N.V. 2000. All rights reserved.
10 2
125
150
T mb ( o C)
175
03aa24
200
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