BUK7880-55A,115 NXP Semiconductors, BUK7880-55A,115 Datasheet - Page 5

• Manufacturer Part Number: BUK7880-55A,115
• Description: MOSFET N-CH TRENCH 55V SOT-223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55A,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 148 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061071115

NXP Semiconductors
6. Characteristics
Table 5.
T
BUK7880-55A_1
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
= 25 C unless otherwise specified.
Parameter
drain-source breakdown voltage I
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance V
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
V
V
I
see
V
see
V
V
I
I
V
D
D
D
S
S
DS
GS
GS
GS
DS
GS
GS
T
T
T
T
T
T
T
T
T
= 15 A; V
= 20 A; dI
= 250 A; V
= 1 mA; V
= 10 A; V
Rev. 01 — 1 November 2007
j
j
j
j
j
j
j
j
j
Figure 14
Figure 12
= 55 V; V
= 20 V; V
= 10 V; I
= 0 V; V
= 30 V; R
= 10 V; R
= 10 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
DD
GS
S
DS
DS
D
/dt = 100 A/ s;
GS
L
G
GS
= 10 A; see
= 0 V; see
= 44 V; V
DS
R
= V
= 1.2 ;
= 25 V; f = 1 MHz;
= 10
= 0 V
= 30 V
= 0 V
= 0 V
GS
; see
GS
Figure 15
Figure 9
Figure 6
= 10 V;
N-channel TrenchMOS standard level FET
and
8
BUK7880-55A
Min
55
50
2
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
68
-
12
2.5
5
374
92
62
8
52
17
9
0.85
33
31
© NXP B.V. 2007. All rights reserved.
Max
-
-
4
-
4.4
10
500
100
80
148
-
-
-
500
110
85
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
5 of 13
A
A