BUK7880-55A,115 NXP Semiconductors, BUK7880-55A,115 Datasheet - Page 3

• Manufacturer Part Number: BUK7880-55A,115
• Description: MOSFET N-CH TRENCH 55V SOT-223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55A,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 148 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061071115

NXP Semiconductors
BUK7880-55A_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
P
10
(%)
D
120
10
der
10
80
40
-1
0
2
1
10
function of solder point temperature
T
P
0
sp
der
-1
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
DM
tot
is single pulse.
Limit R
100 %
100
DSon
= V
DS
150
/ I
D
T
03aa17
sp
1
( C)
Rev. 01 — 1 November 2007
200
Fig 2. Continuous drain current as a function of
(A)
I
D
DC
8
6
4
2
0
V
solder point temperature
0
GS
N-channel TrenchMOS standard level FET
10 V
10
50
BUK7880-55A
V
DS
100
(V)
T
© NXP B.V. 2007. All rights reserved.
sp
t
p
100 s
003aab530
1 ms
10 ms
100 ms
003aab532
= 10 s
( C)
10
150
2
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