BUK7880-55 /T3 NXP Semiconductors, BUK7880-55 /T3 Datasheet
BUK7880-55 /T3
Specifications of BUK7880-55 /T3
Related parts for BUK7880-55 /T3
BUK7880-55 /T3 Summary of contents
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... BUK7880-55 N-channel TrenchMOS standard level FET Rev. 3 — 21 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... °C sp ≤ 2 sup °C; unclamped GS j(init) HBM 100 pF 1.5 kΩ All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 Graphic symbol sym116 Version SOT223 Min Max - - 3 ...
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... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 N-channel TrenchMOS standard level FET 120 Normalized continuous drain current as a function of solder point temperature ...
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... P 0.02 − −2 10 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 N-channel TrenchMOS standard level FET Min Typ - 003aaf271 t p δ − (s) p ...
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... /dt = -100 A/µ ≥ -55 ° - ≤ 175 ° All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 Min Typ Max Unit 1 ...
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... V (V) DS Fig 7. 003aaf274 = 25 ° (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 N-channel TrenchMOS standard level FET 120 V (V) = 6.0 GS 6.5 100 °C j Drain-source on-state resistance as a function of drain current; typical values ...
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... Fig 11. Gate-source threshold voltage as a function of 003aaf278 C (nF (V) GS Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 N-channel TrenchMOS standard level FET 5 maximum 4 typical 3 minimum 2 1 −100 0 100 ...
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... Product data sheet 003aaf280 (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 N-channel TrenchMOS standard level FET 150 ° ° 0.5 1.0 1 ...
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... scale 0.32 6.7 3.7 7.3 4.6 2.3 0.22 6.3 3.3 6.7 REFERENCES JEDEC JEITA SC-73 All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 N-channel TrenchMOS standard level FET detail 1.1 0.95 0.2 0.1 0.1 0.7 0.85 EUROPEAN PROJECTION SOT223 X v ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7880-55 v.3 20110421 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 21 April 2011 BUK7880-55 N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2011 Document identifier: BUK7880-55 ...