BUK7880-55A,115 NXP Semiconductors, BUK7880-55A,115 Datasheet - Page 10

• Manufacturer Part Number: BUK7880-55A,115
• Description: MOSFET N-CH TRENCH 55V SOT-223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55A,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 148 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061071115

NXP Semiconductors
8. Soldering
BUK7880-55A_1
Product data sheet
Fig 18. Reflow soldering footprint for SOT223 (SC-73)
solder lands
solder paste
7.40
1.20
(4 )
1
occupied area
solder resist
Rev. 01 — 1 November 2007
7.00
3.60
3.85
3.50
5.90
6.15
4
2
0.30
1.20 (3 )
1.30 (3 )
3
Dimensions in mm
N-channel TrenchMOS standard level FET
3.90
4.80
7.65
BUK7880-55A
sot223_fr
© NXP B.V. 2007. All rights reserved.
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