PMV213SN,215 NXP Semiconductors, PMV213SN,215 Datasheet - Page 8

• Manufacturer Part Number: PMV213SN,215
• Description: MOSFET N-CH 100V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV213SN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057521215; PMV213SN T/R; PMV213SN T/R

Philips Semiconductors
9397 750 11128
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
6
4
2
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
150 C
GS
0.6
= 0 V
0.9
T j = 25 C
V SD (V)
03aj48
Rev. 02 — 19 February 2003
1.2
Fig 13. Gate-source voltage as a function of gate
V GS
I
(V)
D
10
= 1.2 A; V
8
6
4
2
0
charge; typical values.
0
I D = 1.2 A
T j = 25 C
DD
= 20 V, 50 V, 80 V
2
V DD = 20 V
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4
PMV213SN
50 V
6
Q G (nC)
03aj50
80 V
8
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