PMV213SN,215 NXP Semiconductors, PMV213SN,215 Datasheet - Page 10

• Manufacturer Part Number: PMV213SN,215
• Description: MOSFET N-CH 100V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV213SN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057521215; PMV213SN T/R; PMV213SN T/R

Philips Semiconductors
7. Revision history
Table 5:
9397 750 11128
Product data
Rev Date
02
01
20030219
20030115
Revision history
CPCN
-
-
Description
Product data (9397 750 11128)
Modifications:
Product data (9397 750 10893)
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Section 1.4 “Quick reference data”
Section 1.4 “Quick reference data”
Section 3 “Limiting values”
Section 3 “Limiting values” Figure 3
Section 4 “Thermal characteristics”
Section 4 “Thermal characteristics” Figure 4
Rev. 02 — 19 February 2003
I
D
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DM
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I
P
D
R
SOA graph modified due to improved R
tot
tot
th(j-sp)
modified due to improved R
, I
modified due to improved R
S
, I
SM
improved.
to reflect the improvement in R
modified due to improved R
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
PMV213SN
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