PMV213SN,215 NXP Semiconductors, PMV213SN,215 Datasheet - Page 7

• Manufacturer Part Number: PMV213SN,215
• Description: MOSFET N-CH 100V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV213SN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057521215; PMV213SN T/R; PMV213SN T/R

Philips Semiconductors
9397 750 11128
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
= 1 mA; V
5
4
3
2
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
= V
0
GS
60
max
typ
min
(pF)
C
10 3
10 2
10
120
1
10 -1
T j ( C)
03aa32
Rev. 02 — 19 February 2003
180
1
Fig 10. Sub-threshold drain current as a function of
10
(A)
T
I D
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03aj49
10 2
TrenchMOS™ standard level FET
2
min
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
typ
PMV213SN
4
max
V GS (V)
03aa35
6
7 of 12