PMV213SN,215 NXP Semiconductors, PMV213SN,215 Datasheet - Page 3

MOSFET N-CH 100V 1.9A SOT23

PMV213SN,215

Manufacturer Part Number
PMV213SN,215
Description
MOSFET N-CH 100V 1.9A SOT23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PMV213SN,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.9 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057521215
PMV213SN T/R
PMV213SN T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMV213SN,215
Manufacturer:
HEXAWAVE
Quantity:
3 680
Part Number:
PMV213SN,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
PMV213SN,215
Quantity:
2 691
Philips Semiconductors
9397 750 11128
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
T
P der
P
I D
(%)
10 -1
10 -2
10 -3
sp
120
der
80
40
10
1
0
function of solder point temperature.
= 25 C; I
0
1
=
Limit R DSon = V DS /I D
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse; V
100%
100
GS
= 10V
150
T sp ( C)
10
03aa17
DC
200
Rev. 02 — 19 February 2003
Fig 2. Normalized continuous drain current as a
I der
(%)
I
120
der
80
40
0
function of solder point temperature.
0
=
-------------------
I
D 25 C
10 2
I
D
t p = 10 s
100 s
1 ms
10 ms
100 ms
50
TrenchMOS™ standard level FET
100%
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
100
V DS (V)
PMV213SN
150
T sp ( C)
03aj44
03aa25
10 3
200
3 of 12

Related parts for PMV213SN,215