SUM110N04-2M3L-E3 Vishay, SUM110N04-2M3L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110N04-2M3L-E3
• Description: MOSFET N-CH 40V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110N04-2M3L-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 13600pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0023 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 110A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 3.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110N04-2M3L-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73040
S-80272-Rev. B, 11-Feb-08
18000
15000
12000
9000
6000
3000
250
200
150
100
500
400
300
200
100
50
0
0
0
0
0
0
C
rss
V
20
GS
2
8
V
V
= 10 thru 5 V
DS
DS
Output Characteristics
4 V
C
-
Transconductance
- Drain-to-Source Voltage (V)
D
oss
40
I
r
D
i a
Capacitance
- Drain Current (A)
- n
16
4
o t
S -
60
o
C
u
iss
c r
e
24
6
V
o
T
a t l
80
C
g
= - 55 °C
e
(
) V
32
8
100
125 °C
25 °C
3 V
2 V
120
10
40
0.004
0.003
0.002
0.001
0.000
250
200
150
100
20
16
12
50
8
4
0
0
0
0
0
V
I
D
DS
50
= 110 A
20
= 30 V
On-Resistance vs. Drain Current
V
1
V
GS
100
Transfer Characteristics
GS
SUM110N04-2m3L
Q
= 4.5 V
g
- Gate-to-Source Voltage (V)
40
- Total Gate Charge (nC)
I
D
150
T
Gate Charge
25 °C
C
- Drain Current (A)
2
= 125 °C
200
60
Vishay Siliconix
V
GS
= 10 V
250
3
80
- 55 °C
www.vishay.com
300
4
100
350
400
120
5
3