SUM110N04-05H-E3 Vishay, SUM110N04-05H-E3 Datasheet

MOSFET N-CH 40V 110A D2PAK

SUM110N04-05H-E3

Manufacturer Part Number
SUM110N04-05H-E3
Description
MOSFET N-CH 40V 110A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM110N04-05H-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
6700pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.0053 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
110 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
11A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
5.3mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3.8V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM110N04-05H-E3
SUM110N04-05H-E3TR
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 73131
S-80274-Rev. B, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
(BR)DSS
Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free)
40
(V)
0.0053 at V
G
Top View
TO-263
r
D
DS(on)
S
J
a
a
N-Channel 40-V (D-S) 175 °C MOSFET
= 175 °C)
GS
(Ω)
= 10 V
I
D
110
(A)
C
= 25 °C, unless otherwise noted
Q
g
(Typ.)
95
PCB Mount
T
T
L = 0.1 mH
T
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Junction Temperature
• High Threshold Voltage at High Temperature
c
c
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
AR
thJA
thJC
GS
DS
AR
D
D
®
stg
Power MOSFET
G
N-Channel MOSFET
SUM110N04-05H
- 55 to 175
Limit
Limit
D
S
150
3.75
110
300
125
40
20
70
50
40
1
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
RoHS
V
A
COMPLIANT
1

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SUM110N04-05H-E3 Summary of contents

Page 1

... DS(on) 0.0053 TO-263 Top View Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM110N04-05H Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Drain-to-Source Voltage (V) DS Capacitance Document Number: 73131 S-80274-Rev. B, 11-Feb- °C 125 ° rss SUM110N04-05H Vishay Siliconix 250 200 150 100 T = 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.010 0.008 0.006 0.004 0.002 0.000 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 4

... SUM110N04-05H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 150 175 ( °C J 0.01 0.1 1 100 T = 150 °C ...

Page 5

... Document Number: 73131 S-80274-Rev. B, 11-Feb-08 1000 100 10 1 0.1 0.01 0.001 125 150 175 0 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N04-05H Vishay Siliconix 10 µs 100 µs Limited DS(on) 10 ms, 100 ms °C C Single Pulse Drain-to-Source Voltage ( minimum V ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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