SUM110N04-2M3L-E3 Vishay, SUM110N04-2M3L-E3 Datasheet
SUM110N04-2M3L-E3
Specifications of SUM110N04-2M3L-E3
Related parts for SUM110N04-2M3L-E3
SUM110N04-2M3L-E3 Summary of contents
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... 0.003 4 TO-263 Top View Ordering Information: SUM110N04-2m3L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SUM110N04-2m3L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 73040 S-80272-Rev. B, 11-Feb- ° °C 125 °C 80 100 120 iss SUM110N04-2m3L Vishay Siliconix 250 200 150 100 T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.004 0.003 0.002 0.001 0.000 Drain Current (A) D On-Resistance vs ...
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... SUM110N04-2m3L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 150 ° 0.1 0.00001 0.0001 0.001 0.01 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 10 1 100 125 150 175 ° 0.1 ...
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... Document Number: 73040 S-80272-Rev. B, 11-Feb-08 1000 Limited by r 100 10 0.1 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N04-2m3L Vishay Siliconix DS(on °C C Single Pulse 0 Drain-to-Source Voltage ( minimum V at which r is specified GS ...
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