SUM110N04-2M1P-E3 Vishay, SUM110N04-2M1P-E3 Datasheet

N CHANNEL MOSFET, 40V, 11A, TO-263

SUM110N04-2M1P-E3

Manufacturer Part Number
SUM110N04-2M1P-E3
Description
N CHANNEL MOSFET, 40V, 11A, TO-263
Manufacturer
Vishay
Datasheet

Specifications of SUM110N04-2M1P-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.4mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
2.5V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
TO-263
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0021 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM110N04-2M1P-E3
Quantity:
217
Part Number:
SUM110N04-2M1P-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. Calculated based on maximum junction temperature. Package limitation current is 110 A.
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
40
Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free)
(V)
C
= 25 °C.
0.0024 at V
0.0021 at V
R
DS(on)
GS
GS
(Ω)
J
G
T O-263
T op V i e w
= 4.5 V
= 10 V
= 175 °C)
b
D
S
N-Channel 40-V (D-S) MOSFET
I
D
(A)
110
110
a, c
A
= 25 °C, unless otherwise noted
Q
240 nC
Steady State
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Synchronous Rectification
• Power Supplies
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
AS
I
thJC
thJA
GS
DS
AS
D
S
D
stg
g
and UIS Tested
®
Power MOSFET
Typical
0.33
32
G
N-Channel MOSFET
- 55 to 150
SUM110N04-2m1P
110
110
Limit
3.13
110
312
± 20
2.6
2.0
250
320
200
29
23
40
80
a, c
a, c
b
b
b
b
c
a
b
D
S
Maximum
0.4
40
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
V
A
RoHS
COMPLIANT
1

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SUM110N04-2M1P-E3 Summary of contents

Page 1

... DS(on) 0.0021 0.0024 4 O-263 Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM110N04-2m1P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... C oss C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 69983 S-80680-Rev. A, 31-Mar-08 New Product 1.5 2.0 2.5 0.0040 0.0032 0.0024 0.0016 T = 125 °C C 0.0008 0.0000 SUM110N04-2m1P Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 100 I - Drain Current (A) D On-Resistance vs ...

Page 4

... SUM110N04-2m1P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 V 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.010 0.008 0.006 0.004 0.002 0.000 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 1000 100 10 0.1 0.01 www.vishay.com 4 New Product = 4 0.001 75 100 125 150 - 0 ...

Page 5

... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N04-2m1P Vishay Siliconix 100 125 T - Junction to Case (°C) J Power Derating -1 10 www ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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