... DS(on) 0.0021 0.0024 4 O-263 Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
... SUM110N04-2m1P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
... C oss C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 69983 S-80680-Rev. A, 31-Mar-08 New Product 1.5 2.0 2.5 0.0040 0.0032 0.0024 0.0016 T = 125 °C C 0.0008 0.0000 SUM110N04-2m1P Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 100 I - Drain Current (A) D On-Resistance vs ...
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