SIHP18N50C-E3 Vishay, SIHP18N50C-E3 Datasheet - Page 6

• Manufacturer Part Number: SIHP18N50C-E3
• Description: MOSFET N-CH 500V 18A TO220
• Manufacturer: Vishay

Specifications of SIHP18N50C-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 2942pF @ 25V
• Power - Max: 223W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 65 nC
• Resistance Drain-source Rds (on): 0.225 Ohms
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 223 W
• Mounting Style: Through Hole
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 225mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiHP18N50C
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91374.
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Reverse
recovery
current
+
-
R
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
This datasheet is subject to change without notice.
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Fig. 14 - For N-Channel
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
www.vishay.com/doc?91000
S11-0520-Rev. D, 21-Mar-11
Document Number: 91374