SIHP18N50C-E3 Vishay, SIHP18N50C-E3 Datasheet - Page 5

• Manufacturer Part Number: SIHP18N50C-E3
• Description: MOSFET N-CH 500V 18A TO220
• Manufacturer: Vishay

Specifications of SIHP18N50C-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 2942pF @ 25V
• Power - Max: 223W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 65 nC
• Resistance Drain-source Rds (on): 0.225 Ohms
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 223 W
• Mounting Style: Through Hole
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 225mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
90 %
10 %
AS
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
V
V
0.01
DS
GS
0.1
R
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1
10 V
G
G
10
10 V
V
0.02
0.1
0.05
-4
Duty Cycle = 0.5
0.2
GS
t
V
d(on)
DS
V
t
DS
p
t
r
Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case
I
Single Pulse
AS
D.U.T
D.U.T.
0.01 Ω
L
R
D
t
d(off)
10
-3
t
This datasheet is subject to change without notice.
f
+
-
V
DD
+
-
V
DD
Pulse Time (s)
10
-2
Fig. 12b - Unclamped Inductive Waveforms
Fig. 13a - Basic Gate Charge Waveform
10 V
V
I
AS
V
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
Current regulator
0.1
Q
0.2 µF
GS
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
t
GD
p
G
I
G
www.vishay.com/doc?91000
Vishay Siliconix
SiHP18N50C
D.U.T.
V
I
D
DS
1
+
-
V
V
www.vishay.com
DD
DS
5