SIHP18N50C-E3 Vishay, SIHP18N50C-E3 Datasheet - Page 4

• Manufacturer Part Number: SIHP18N50C-E3
• Description: MOSFET N-CH 500V 18A TO220
• Manufacturer: Vishay

Specifications of SIHP18N50C-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 2942pF @ 25V
• Power - Max: 223W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 65 nC
• Resistance Drain-source Rds (on): 0.225 Ohms
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 223 W
• Mounting Style: Through Hole
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 225mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiHP18N50C
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
10
20
16
12
10
8
4
0
2
5
4
3
1
0
I
D
= 17 A
V
DS ,
Q
30
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
V
V
DS
DS
DS
10
= 400 V
= 250 V
= 100 V
V
C
C
C
GS
iss
rss
oss
= C
60
= 0 V, f = 1 MHz
= C
= C
gs
gd
ds
Fig. 9 - Maximum Drain Current vs. Case Temperature
+ C
+ C
100
20
15
10
gd
gd
5
0
, C
This datasheet is subject to change without notice.
90
25
ds
C
C
C
Shorted
iss
oss
rss
50
1000
T
120
C
, Case Temperature (°C)
75
100
125
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
10
10
0.1
0.1
10
10
2
3
1
1
10
0.2
150
Operation in this area limited
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
C
J
T
= 150 °C
= 25 °C
V
J
V
DS
= 150 °C
SD
, Drain-to-Source Voltage (V)
by R
, Source-to-Drain Voltage (V)
0.5
10
DS(on)
2
0.8
www.vishay.com/doc?91000
S11-0520-Rev. D, 21-Mar-11
Document Number: 91374
100 µs
1 ms
10 ms
T
10
J
V
= 25 °C
GS
3
1.1
= 0 V
10
1.4
4