SIHP18N50C-E3 Vishay, SIHP18N50C-E3 Datasheet - Page 2

• Manufacturer Part Number: SIHP18N50C-E3
• Description: MOSFET N-CH 500V 18A TO220
• Manufacturer: Vishay

Specifications of SIHP18N50C-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 2942pF @ 25V
• Power - Max: 223W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 65 nC
• Resistance Drain-source Rds (on): 0.225 Ohms
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 223 W
• Mounting Style: Through Hole
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 225mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiHP18N50C
Vishay Siliconix
Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
SYMBOL
This datasheet is subject to change without notice.
TO-220
TO-220
V
R
V
C
t
t
I
I
I
V
DS(on)
C
C
Q
V
GS(th)
Q
RRM
GSS
d(on)
d(off)
I
Q
DSS
g
R
Q
DS
SM
t
I
t
t
DS
oss
SD
iss
rss
S
rr
fs
gs
gd
r
f
g
g
rr
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
GS
GS
V
SYMBOL
DS
T
Reference to 25 °C, I
R
R
= 10 V
= 10 V
J
thJA
thJC
= 400 V, V
dI/dt = 100 A/μs, V
= 25 °C, I
f = 1.0 MHz, open drain
V
R
V
V
V
TEST CONDITIONS
V
DD
g
DS
DS
GS
DS
T
= 7.5 , V
J
= 250 V, I
= 500 V, V
= V
= 0 V, I
V
= 25 °C, I
= 50 V, I
f = 1.0 MHz
V
GS
V
DS
GS
GS
S
GS
I
D
= ± 30 V
= 18 A, V
, I
= 25 V,
= 0 V,
= 18 A, V
= 0 V, T
D
D
GS
= 250 μA
D
D
= 250 μA
GS
F
I
= 10 A
= 18 A
D
= 10 V
= I
TYP.
D
R
= 10 A
= 0 V
-
-
= 1 mA
= 35 V
S
J
GS
,
DS
G
= 125 °C
= 0 V
= 400 V
D
S
MIN.
500
3.0
MAX.
0.56
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
62
www.vishay.com/doc?91000
S11-0520-Rev. D, 21-Mar-11
Document Number: 91374
0.225
TYP.
2451
300
503
0.6
6.4
1.1
6.7
26
65
21
29
80
27
32
44
30
-
-
-
-
-
-
-
-
MAX.
± 100
0.270
2942
250
360
5.0
1.5
25
32
76
18
72
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
V/°C
nA
μA
nC
μC
pF
ns
ns


V
V
S
A
V
A