SIHP18N50C-E3 Vishay, SIHP18N50C-E3 Datasheet - Page 3

• Manufacturer Part Number: SIHP18N50C-E3
• Description: MOSFET N-CH 500V 18A TO220
• Manufacturer: Vishay

Specifications of SIHP18N50C-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 2942pF @ 25V
• Power - Max: 223W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Gate Charge Qg: 65 nC
• Resistance Drain-source Rds (on): 0.225 Ohms
• Forward Transconductance Gfs (max / Min): 6.4 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 223 W
• Mounting Style: Through Hole
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 560V
• On Resistance Rds(on): 225mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
40
30
20
10
70
60
50
40
30
20
10
0
0
0
0
Top
Bottom
Top
Bottom
V
V
DS
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
DS
V
6
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
V
6
GS
, Drain-to-Source Voltage (V)
GS
, Drain-to-Source Voltage (V)
12
12
18
18
7.0 V
T
T
This datasheet is subject to change without notice.
J
J
=
=
24
24
150 °C
C
25 °C
C
= 150 °C
= 150 °C
7.0 V
30
30
Fig. 4 - Normalized On-Resistance vs. Temperature
100
0.01
2.5
1.5
0.5
0.1
10
0
3
2
1
1
- 60 - 40 - 20
5
Fig. 3 - Typical Transfer Characteristics
I
T
D
J
= 17 A
= 150 °C
V
T
GS ,
6
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
0
T
20 40 60 80 100 120 140 160
J
= 25 °C
7
www.vishay.com/doc?91000
Vishay Siliconix
SiHP18N50C
8
V
GS
= 10 V
www.vishay.com
9
10
3