IRFR430APBF Vishay, IRFR430APBF Datasheet - Page 5

• Manufacturer Part Number: IRFR430APBF
• Description: MOSFET N-CH 500V 5A DPAK
• Manufacturer: Vishay

Specifications of IRFR430APBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR430APBF

Document Number: 91276
S10-1135-Rev. C, 10-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
5.5
4.4
3.3
2.2
1.1
0.0
Fig. 12a - Unclamped Inductive Test Circuit
25
0.01
0.1
10
0.00001
1
R
20 V
g
D = 0.50
V
DS
0.20
0.10
0.05
0.02
0.01
t
50
T , Case Temperature
p
C
I
AS
D.U.T
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
15 V
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Driver
(
°
125
+
- V
C)
t , Rectangular Pulse Duration (sec)
1
DD
A
0.001
150
0.01
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
1. Duty factor D =
2. Peak T
V
Notes:
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
J
GS
t
d(on)
= P
V
DM
DS
t
r
x Z
t / t
1
0.1
t
p
thJC
P
2
DM
D.U.T.
+ T
C
t
Vishay Siliconix
R
1
D
t
d(off)
V
t
2
DS
t
f
+
-
www.vishay.com
V
DD
1
5