IRFR430APBF Vishay, IRFR430APBF Datasheet
IRFR430APBF
Specifications of IRFR430APBF
Available stocks
Related parts for IRFR430APBF
IRFR430APBF Summary of contents
Page 1
... IPAK (TO-252) (TO-251 ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and SiHFR430A-GE3 Halogen-free IRFR430APbF Lead (Pb)-free SiHFR430A-E3 IRFR430A SnPb SiHFR430A Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor ...
Page 2
... IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current ...
Page 3
... Document Number: 91276 S10-1135-Rev. C, 10-May-10 IRFR430A, IRFU430A, SiHFR430A, SiHFU430A 100.00 10.00 1.00 4.5V 0.10 0.01 10 100 4.5V 10 100 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix 150° 25° 100V 20μs PULSE WIDTH 4.0 6.0 8.0 10.0 12.0 14 Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics 3 ...
Page 4
... IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 5. 400V 250V 100V Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 SHORTED 10 1 100 1000 0 ...
Page 5
... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91276 S10-1135-Rev. C, 10-May-10 IRFR430A, IRFU430A, SiHFR430A, SiHFU430A 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS ...
Page 6
... IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix 250 200 150 100 100 Starting Tj, Junction Temperature Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 5 TOP 2.2A 3.2A 4.5 BOTTOM 5.0A 4.0 3.5 3.0 2.5 125 150 ° ...
Page 7
... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91276. Document Number: 91276 S10-1135-Rev ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...