IRFR IRF [International Rectifier], IRFR Datasheet

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IRFR

Manufacturer Part Number
IRFR
Description
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
Manufacturer
IRF [International Rectifier]
Datasheet

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Description
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
JA
JA
Surface Mount (IRFR120N)
Straight Lead (IRFU120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
T O -252 A A
HEXFET
D -P A K
IRFR/U120N
-55 to + 175
S
D
Max.
0.32
± 20
9.4
6.6
5.7
4.8
5.0
38
48
91
T O -25 1A A
®
R
I-P A K
Power MOSFET
V
DS(on)
Max.
110
DSS
3.1
50
PD - 91365B
I
D
= 9.4A
= 100V
= 0.21
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
5/11/98

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IRFR Summary of contents

Page 1

... Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ...

Page 2

... IRFR/U120N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... -60 -40 - Junction T em perature (° Fig 4. Normalized On-Resistance Vs. Temperature IRFR/U120N 4 .5V 2 0µ 5° ...

Page 4

... IRFR/U120N iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRFR/U120N D.U. 5.0V Pulse Width µs Duty Factor ...

Page 6

... IRFR/U120N 0.0 1 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform ...

Page 7

... Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% Fig 14. For N-Channel HEXFETS IRFR/U120N + =10V ...

Page 8

... IRFR/U120N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. (. ...

Page 9

... TIF IRFR/U120N TIO ...

Page 10

... IRFR/U120N Tape & Reel Information TO-252AA ILLIM ILL ...

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