IRFR430APBF Vishay, IRFR430APBF Datasheet - Page 3

• Manufacturer Part Number: IRFR430APBF
• Description: MOSFET N-CH 500V 5A DPAK
• Manufacturer: Vishay

Specifications of IRFR430APBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR430APBF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91276
S10-1135-Rev. C, 10-May-10
0.001
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM 4.5V
TOP
BOTTOM 4.5V
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
VGS
VGS
15V
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1
1
20μs PULSE WIDTH
Tj = 25°C
20μs PULSE WIDTH
Tj = 150°C
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
10
10
4.5V
4.5V
100
100
100.00
10.00
1.00
0.10
0.01
Fig. 4 - Normalized On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
-60
Fig. 3 - Typical Transfer Characteristics
I
D
=
-40
5.0A
T J = 25°C
6.0
V GS , Gate-to-Source Voltage (V)
-20
T , Junction Temperature
J
0
8.0
20
40
10.0
V DS = 100V
20μs PULSE WIDTH
60
Vishay Siliconix
80
12.0
T J = 150°C
100
( C)
V
www.vishay.com
°
120
14.0
GS
=
140
10V
16.0
160
3