IRFR430APBF Vishay, IRFR430APBF Datasheet - Page 4

• Manufacturer Part Number: IRFR430APBF
• Description: MOSFET N-CH 500V 5A DPAK
• Manufacturer: Vishay

Specifications of IRFR430APBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR430APBF

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
Vishay Siliconix
www.vishay.com
4
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
100
10
1
12
10
7
5
2
0
1
0
I
D
=
5.0A
V DS , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
4
G
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
V
V
V
8
DS
DS
DS
= 400V
= 250V
= 100V
Coss
Ciss
Crss
f = 1 MHZ
12
100
16
SHORTED
1000
20
100
0.1
100
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
10
1
1
0.2
10
Tc = 25°C
Tj = 150°C
Single Pulse
T = 150
Fig. 8 - Maximum Safe Operating Area
J
V DS , Drain-toSource Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
0.5
°
C
100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0.8
S10-1135-Rev. C, 10-May-10
T = 25
J
10msec
100μsec
1msec
Document Number: 91276
1000
°
C
1.1
V
GS
= 0 V
10000
1.4