FQP32N20C_F080 Fairchild Semiconductor, FQP32N20C_F080 Datasheet - Page 9

• Manufacturer Part Number: FQP32N20C_F080
• Description: MOSFET N-CH 200V 28A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP32N20C_F080

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 156W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.082 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28 A
• Power Dissipation: 156 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
0.20
0.10
0.10
]
10.16
9.40
#1
(7.00)
(Continued)
0.20
0.20
[2.54
2.54TYP
TO-220F
ø3.18
0.20
]
0.10
(1.00x45 )
0.50
+0.10
–0.05
Dimensions in Millimeters
2.54
2.76
(0.70)
0.20
0.20
Rev. A, March 2004