FQB5N50CTM Fairchild Semiconductor, FQB5N50CTM Datasheet - Page 4

• Manufacturer Part Number: FQB5N50CTM
• Description: MOSFET N-CH 500V 5A A.D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB5N50CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 73W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 73 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
Figure 7. Breakdown Voltage Variation
2
1
0
10
0
-50
Operation in This Area
is Limited by R
T
V
vs Temperature
J
DS
, Junction Temperature [
1 0
1 0
1 0
10
0
, Drain-Source Voltage [V]
DS(on)
1
- 1
- 2
0
1 0
- 5
D = 0 .5
0 . 0 5
0 . 0 2
0 . 0 1
0 . 2
0 . 1
50
Figure 11. Transient Thermal Response Curve
DC
100 ms
10 ms
1 0
(Continued)
s in g le p u ls e
100
10
※ Notes :
- 4
1. T
2. T
3. Single Pulse
o
2
C]
1 ms
C
J
※ Notes :
= 25
= 150
t
1. V
2. I
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
D
100 s
o
G S
= 250 μ A
C
o
C
150
= 0 V
10 s
1 0
- 3
200
10
3
1 0
- 2
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
-100
Figure 10. Maximum Drain Current
1 0
※ N o te s :
Figure 8. On-Resistance Variation
- 1
P
1 . Z
2 . D u ty F a c to r, D = t
3 . T
DM
θ J C
J M
-50
50
- T
(t) = 1 .7 1 ℃ /W M a x .
vs Case Temperature
C
= P
t
1
t
T
T
2
1 0
D M
vs Temperature
C
J
, Junction Temperature [
, Case Temperature [ ℃ ]
0
* Z
0
75
1
θ J C
/t
2
(t)
50
1 0
100
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2.5 A
= 10 V
150
Rev. A1, Oct 2008
200