NDS8435A Fairchild Optoelectronics Group, NDS8435A Datasheet

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NDS8435A

Manufacturer Part Number
NDS8435A
Description
MOSFET P-CH 30V 7.9A 8-SOIC
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of NDS8435A

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 7.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q4210279C

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Absolute Maximum Ratings
© 1997 Fairchild Semiconductor Corporation
___________________________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
NDS8435A
General Description
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
D
Single P-Channel Enhancement Mode Field Effect Transistor
DSS
GSS
D
J
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(
(Note 1a)
(Note 1b)
(Note 1c)
Note 1a)
(Note 1)
Features
-7.9 A, -30 V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
5
6
7
8
R
NDS8435A
DS(ON)
DS(ON)
-55 to 150
-7.9
±20
-30
-25
2.5
1.2
50
25
1
= 0.035
= 0.023
@ V
@ V
4
2
3
1
GS
GS
= -4.5V.
= -10 V
DS(ON).
March 1997
NDS8435A Rev.C
Units
°C/W
°C/W
°C
W
V
V
A
1

Related parts for NDS8435A

NDS8435A Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted (Note 1a) (Note 1a) (Note 1b) (Note 1c) ( Note 1a) (Note 1) March 1997 = 0.023 @ V = -10 V DS(ON 0.035 @ V = -4.5V. DS(ON) GS DS(ON NDS8435A Units -30 V ±20 V -7.9 A -25 2.5 W 1.2 1 -55 to 150 °C 50 °C/W 25 °C/W NDS8435A Rev.C 1 ...

Page 2

... I = -250 µ 125° - -7 125° - - 1.0 MHz GEN GEN Min Typ Max Units - µA -10 µA 100 nA -100 -0.7 -1 -2.2 0.02 0.023 0.027 0.041 0.03 0.035 -25 A -10 -17 S 1800 pF 950 pF 240 180 ns 46 100 NDS8435A Rev.C ...

Page 3

... C/W when mounted on a 0.04 in pad of 2oz copper 125 C/W when mounted on a 0.006 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -2.1 A (Note Min Typ Max Units -2.1 A -0.74 -1 guaranteed NDS8435A Rev.C 1 ...

Page 4

... Figure 6. Gate Threshold Variation . -4.0 -4.5 -5.0 -6.0 -7.0 -10 -5 -10 -15 -20 - DRAIN CURRENT ( 125°C J 25°C -55°C -5 -10 -15 -20 - DRAIN CURRENT ( =-250µ JUNCTION TEMPERATURE (° with Temperature NDS8435A Rev ...

Page 5

... C rss Figure 10. Gate Charge Characteristics. t d(on OUT Figure 12. Switching Waveforms . = 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD with Source Current and . Temperature V = - GATE CHARGE (nC off t t d(off INVERTED PULSE WIDTH . NDS8435A Rev.C 1.2 - ...

Page 6

... Figure 16. Maximum Safe Operating Area 0.01 0 TIME (sec) 1 4.5"x5" FR-4 Board Still Air 0.2 0.4 0.6 0 2oz COPPER MOUNTING PAD AREA ( -10V GS SINGLE PULSE R = See Note 25° 0.2 0 DRAIN-SOURCE VOLTAGE ( ( See note 1c JA P(pk ( Duty Cycle 100 . 300 1 NDS8435A Rev.C ...

Page 7

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ...

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