SIA450DJ-T1-GE3 Vishay, SIA450DJ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA450DJ-T1-GE3
• Description: MOSFET N-CH 240V 10A SC70-6
• Manufacturer: Vishay

Specifications of SIA450DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: *
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: *
• Input Capacitance (ciss) @ Vds: *
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Transistor Type: MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiA450DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
http://www.vishay.com/ppg?73603.
1
1
10
10
-4
-4
0.02
Duty Cycle = 0.5
0.2
0.05
0.1
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
S-80436-Rev. C, 03-Mar-08
t
Document Number: 73603
2
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 65 °C/W
1
0
10
0
0
-1