SIA450DJ-T1-GE3 Vishay, SIA450DJ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIA450DJ-T1-GE3
• Description: MOSFET N-CH 240V 10A SC70-6
• Manufacturer: Vishay

Specifications of SIA450DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: *
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: *
• Input Capacitance (ciss) @ Vds: *
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Transistor Type: MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73603
S-80436-Rev. C, 03-Mar-08
On-Resistance vs. Drain Current and Gate Voltage
1.5
1.2
0.9
0.6
0.3
0.0
10
8
6
4
2
0
5
4
3
2
1
0.0
0
0
I
D
= 0.73 A
1
0.5
V
2
DS
Q
Output Characteristics
g
V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
GS
I
2
D
Gate Charge
- Drain Current (A)
= 2.5 V
1.0
V
DS
V
= 120 V
GS
3
4
= 10 thru 3 V
V
GS
1.5
= 1 V
4
V
V
DS
GS
6
= 150 V
V
= 4.5 V
2.0
GS
V
GS
5
= 10 V
= 2 V
New Product
2.5
6
8
250
200
150
100
1.5
1.2
0.9
0.6
0.3
0.0
2.5
2.0
1.5
1.0
0.5
0.0
50
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
0.6
50
V
V
Transfer Characteristics
DS
T
GS
0
J
T
V
V
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
J
- Gate-to-Source Voltage (V)
1.2
GS
GS
= 125 °C
T
Capacitance
25
100
= 10 V, I
= 4.5 V, I
J
= 25 °C
C
1.8
C
50
oss
Vishay Siliconix
iss
D
D
= 0.70 A
= 0.65 A
150
75
SiA450DJ
2.4
T
J
V
I
www.vishay.com
D
= - 55 °C
100
GS
= 0.50 A
200
= 2.5 V,
3.0
125
250
3.6
150
3