SIA450DJ-T1-GE3 Vishay, SIA450DJ-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIA450DJ-T1-GE3
• Description: MOSFET N-CH 240V 10A SC70-6
• Manufacturer: Vishay

Specifications of SIA450DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: *
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: *
• Input Capacitance (ciss) @ Vds: *
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Transistor Type: MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73603
S-80436-Rev. C, 03-Mar-08
2.0
1.5
1.0
0.5
0.0
0
25
D
T
C
is based on T
Current Derating*
- Case Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
20
16
12
8
4
0
0
25
T
C
50
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiA450DJ
www.vishay.com
125
150
5