SIA450DJ-T1-GE3 Vishay, SIA450DJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA450DJ-T1-GE3
• Description: MOSFET N-CH 240V 10A SC70-6
• Manufacturer: Vishay

Specifications of SIA450DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: *
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: *
• Input Capacitance (ciss) @ Vds: *
• Power - Max: 15W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Transistor Type: MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiA450DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
2.1
1.8
1.5
1.2
0.9
0.6
0.1
10
1
- 50
0.0
Soure-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
I
D
Threshold Voltage
T
- Source-to-Drain Voltage (V)
0.4
T
= 250 µA
J
J
= 150 °C
25
- Temperature (°C)
0.6
50
75
0.8
0.001
0.01
T
0.1
10
J
100
1
= 25 °C
0.1
* V
1.0
Safe Operating Area, Junction-to-Ambient
125
GS
Single Pulse
V
150
minimum V
New Product
T
1.2
DS
1
A
Limited by R
= 25 °C
- Drain-to-Source Voltage (V)
GS
at which R
DS(on)
10
*
DS(on)
30
25
20
15
10
100
5
0
0.001
8
6
4
2
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
10 ms
1 s
10 s
DC
0.01
1000
2
V
GS
0.1
- Gate-to-Source Voltage (V)
4
Time (s)
1
T
T
S-80436-Rev. C, 03-Mar-08
A
A
Document Number: 73603
= 25 °C
= 125 °C
6
10
I
D
= 0.70 A
100
8
1000
10