SIA450DJ-T1-GE3 Vishay, SIA450DJ-T1-GE3 Datasheet

MOSFET N-CH 240V 10A SC70-6

SIA450DJ-T1-GE3

Manufacturer Part Number
SIA450DJ-T1-GE3
Description
MOSFET N-CH 240V 10A SC70-6
Manufacturer
Vishay
Datasheet

Specifications of SIA450DJ-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
*
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2.4V @ 250µA
Gate Charge (qg) @ Vgs
*
Input Capacitance (ciss) @ Vds
*
Power - Max
15W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Transistor Type
MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA450DJ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73603
S-80436-Rev. C, 03-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
240
DS
(V)
2.05 mm
6
PowerPAK SC-70-6L-Single
D
5
D
2.95 at V
3.5 at V
2.9 at V
4
h
S
R
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
GS
GS
1
GS
S
= 2.5 V
= 10 V
D
(Ω)
= 4.5 V
J
2.05 mm
2
= 150 °C)
a, e
G
3
N-Channel 240-V (D-S) MOSFET
Ordering Information: SiA450DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
1.52
1.44
1.5
(A)
c, d
A
Part # code
= 25 °C, unless otherwise noted
Q
2.54 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
A D X
X X X
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Boost Converter for Portable Devices
Symbol
Symbol
T
Lot Traceability
and Date code
R
R
SC-70 Package
- Small Footprint Area
- Low On-Resistance
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
6.5
30
- 55 to 150
0.70
0.56
2.74
3.3
2.1
Limit
± 20
1.52
1.21
12.8
240
260
1.5
9.8
15
a, b
a, b
a, b
a, b
a, b
Maximum
8.1
38
Vishay Siliconix
G
N-Channel MOSFET
®
SiA450DJ
www.vishay.com
D
S
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SIA450DJ-T1-GE3

SIA450DJ-T1-GE3 Summary of contents

Page 1

... New Thermally Enhanced PowerPAK 1.5 2.54 nC SC-70 Package 1.44 - Small Footprint Area - Low On-Resistance APPLICATIONS • Boost Converter for Portable Devices Marking Code Part # code Lot Traceability and Date code Ordering Information: SiA450DJ-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...

Page 2

... SiA450DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73603 S-80436-Rev. C, 03-Mar-08 New Product 4 1.5 2.0 2 150 SiA450DJ Vishay Siliconix 1.5 1.2 0 ° 125 ° °C J 0.0 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 250 200 C iss 150 ...

Page 4

... SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 2 250 µA D 1.8 1.5 1.2 0.9 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 0.8 1.0 1.2 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73603 S-80436-Rev. C, 03-Mar-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA450DJ Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords