FQT7N10LTF Fairchild Semiconductor, FQT7N10LTF Datasheet

MOSFET N-CH 100V 1.7A SOT-223

FQT7N10LTF

Manufacturer Part Number
FQT7N10LTF
Description
MOSFET N-CH 100V 1.7A SOT-223
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Type
Power MOSFETr
Datasheet

Specifications of FQT7N10LTF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 850mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
290pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.75 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.35Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQT7N10LTFTR

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©2001 Fairchild Semiconductor Corporation
FQT7N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency
switching DC/DC converters, and DC motor control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Ambient *
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
SOT-223
FQT Series
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 70°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 1.7A, 100V, R
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• Improved dv/dt capability
• Low level gate drive requirments allowing
direct operationfrom logic drives
DS(on)
Typ
--
G
!
!
-55 to +150
FQT7N10L
= 0.35
0.016
1.36
300
100
1.7
6.8
1.7
0.2
6.0
2.0
50
! "
! "
20
!
!
!
!
S
D
"
"
"
"
"
"
@V
Max
62.5
QFET
GS
= 10 V
May 2001
Units
W/°C
Units
°C/W
V/ns
mJ
mJ
Rev. A, May 2001
°C
°C
W
V
A
A
A
V
A
TM

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FQT7N10LTF Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Ambient * JA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Features • 1.7A, 100V, R • Low gate charge ( typical 4.6 nC) • Low Crss ( typical 12 pF) • Fast switching • Improved dv/dt capability • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 26mH 1.7A 25V ≤ 7.3A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 100 ...

Page 3

... Drain Current and Gate Voltage 600 500 400 C iss 300 C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 150℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 0 10 ※ Note : T = 25℃ ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 2.0 1.6 100 1.2 100 ms 0.8 ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2001 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Rev. A, May 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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