PSMN7R6-60PS,127 NXP Semiconductors, PSMN7R6-60PS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN7R6-60PS,127
• Description: MOSFET N-CH 60V 92A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R6-60PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 38.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 2651pF @ 30V
• Power - Max: 149W
• Mounting Type: Through Hole
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.8 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4970-5

NXP Semiconductors
6. Characteristics
Table 6.
PSMN7R6-60PS
Product data sheet
Symbol
Static characteristics
V
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GSth
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown voltage I
gate-source threshold voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 28 October 2010
I
I
V
f = 1 MHz
I
I
I
V
V
V
Conditions
I
see
see
I
see
V
V
V
V
see
V
see
see
see
14; see
T
Figure 8
V
T
T
Figure 8
R
D
D
D
D
D
D
D
D
j
j
j
DS
DS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 A; V
= 25 A; V
= 25 °C; see
= 25 °C; see
= 25 °C; see
Figure
Figure 11
Figure 11
Figure 12
Figure
Figure
Figure
= 60 V; V
= 60 V; V
= 30 V; V
= 30 V; V
= 30 V; V
= 30 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 4.7 Ω
Figure 15
10; see
13; see
14; see
15; see
DS
DS
DS
DS
DS
DS
D
D
GS
GS
DS
GS
GS
GS
L
GS
GS
DS
= 25 A; T
= 25 A; T
= 30 V; V
= 30 V; V
= 30 V; see
= V
= V
= V
= 1.2 Ω; V
Figure
Figure 16
Figure
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
N-channel 60 V 7.8 mΩ standard level MOSFET
GS
GS
GS
Figure 11
Figure 9
Figure 15
Figure 14
; T
; T
; T
16; see
16; see
j
j
j
j
j
GS
GS
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 175 °C;
= 25 °C;
j
j
j
GS
= 25 °C
= 125 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
Figure
= 10 V;
= 10 V;
= 10 V;
PSMN7R6-60PS
Min
54
60
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
2
13.3
5.9
0.98
38.7
12.9
6.9
6
10.6
5.6
2651
342
183
19
21
37
13
© NXP B.V. 2010. All rights reserved.
-
Max
-
-
4
-
4.6
10
100
100
100
18
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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