PSMN7R6-60PS,127 NXP Semiconductors, PSMN7R6-60PS,127 Datasheet

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PSMN7R6-60PS,127

Manufacturer Part Number
PSMN7R6-60PS,127
Description
MOSFET N-CH 60V 92A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN7R6-60PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
92A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
38.7nC @ 10V
Input Capacitance (ciss) @ Vds
2651pF @ 30V
Power - Max
149W
Mounting Type
Through Hole
Gate Charge Qg
38.7 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.8 mOhms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
92 A
Power Dissipation
149 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4970-5
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
GD
PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
Rev. 03 — 28 October 2010
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
non-repetitive
drain-source avalanche
energy
Conditions
T
T
see
T
V
T
see
V
V
see
V
I
R
D
j
mb
mb
GS
j
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 92 A; V
Figure 1
Figure 9
Figure 14
= 25 °C; V
= 25 °C; see
= 30 V; see
= 10 V; I
= 10 V; I
= 10 V; T
= 50 Ω; unclamped
sup
j
D
D
≤ 175 °C
j(init)
GS
= 25 A;
= 25 A;
≤ 100 V;
Figure
Suitable for standard level gate drive
sources
Motor control
Server power supplies
Figure
Figure 2
= 10 V;
= 25 °C;
13;
15;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
5.9
10.6 -
-
Max Unit
60
92
149
7.8
110
V
A
W
mΩ
nC
mJ

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PSMN7R6-60PS,127 Summary of contents

Page 1

... PSMN7R6-60PS N-channel 60 V 7.8 mΩ standard level MOSFET Rev. 03 — 28 October 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... °C; see Figure °C mb ≤ 10 µs; T pulsed ° ° j(init) ≤ 100 Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS Graphic symbol mbb076 Version SOT78 Min Max - -20 20 Figure Figure Figure 3 - 389 - 149 ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS 0 50 100 150 T 003aad700 10 μs 100 μ 100 ms V (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN7R6-60PS Product data sheet N-channel 60 V 7.8 mΩ standard level MOSFET Conditions see Figure 4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS Min Typ Max - 0.49 1.01 003aad662 δ ...

Page 5

... Figure MHz °C; see Figure MHz °C; see Figure 16; see j Figure 8 = 1.2 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS Min Typ Max = -55 ° ° ° 175 ° -55 ° 4 ° 125 °C ...

Page 6

... V (V) = 4 (V) DS Fig 6. 003aad665 = 25 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS N-channel 60 V 7.8 mΩ standard level MOSFET Min = 25 ° 160 g fs (S) 120 Forward transconductance as a function of drain current; typical values ...

Page 7

... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS 03aa35 min typ max (V) GS 003aad696 0 60 120 180 T (° ...

Page 8

... I (A) D Fig 14. Gate-source voltage as a function of gate Q GD 003aaa508 Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS N-channel 60 V 7.8 mΩ standard level MOSFET ( charge ...

Page 9

... Product data sheet N-channel 60 V 7.8 mΩ standard level MOSFET 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS 003aad670 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 10

... REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS N-channel 60 V 7.8 mΩ standard level MOSFET mounting base ( max ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN7R6-60PS v.3 20101028 • Modifications: Various changes to content. PSMN7R6-60PS v.2 20100122 PSMN7R6-60PS Product data sheet N-channel 60 V 7.8 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 28 October 2010 PSMN7R6-60PS Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 28 October 2010 Document identifier: PSMN7R6-60PS ...

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