PSMN7R6-60PS,127 NXP Semiconductors, PSMN7R6-60PS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN7R6-60PS,127
• Description: MOSFET N-CH 60V 92A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R6-60PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 38.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 2651pF @ 30V
• Power - Max: 149W
• Mounting Type: Through Hole
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.8 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4970-5

NXP Semiconductors
PSMN7R6-60PS
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
10
10
I
D
10
10
D
100
10
80
60
40
20
−1
−2
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
Limit R
50
DSon
= V
DS
100
/ I
D
150
T
All information provided in this document is subject to legal disclaimers.
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Fig 2.
DC
P
(%)
N-channel 60 V 7.8 mΩ standard level MOSFET
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
PSMN7R6-60PS
100
V
DS
(V)
150
10 μs
1 ms
10 ms
100 ms
100 μs
© NXP B.V. 2010. All rights reserved.
T
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