PSMN7R6-60PS,127 NXP Semiconductors, PSMN7R6-60PS,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN7R6-60PS,127
• Description: MOSFET N-CH 60V 92A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R6-60PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 38.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 2651pF @ 30V
• Power - Max: 149W
• Mounting Type: Through Hole
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.8 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4970-5

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN7R6-60PS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN7R6-60PS
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to
drain
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 28 October 2010
Conditions
T
R
V
V
pulsed; t
T
T
pulsed; t
V
V
j
mb
mb
GS
GS
GS
sup
GS
Simplified outline
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 20 kΩ
≤ 100 V; R
SOT78 (TO-220AB)
p
p
≤ 10 µs; T
≤ 10 µs; T
j
≤ 175 °C
mb
mb
j(init)
1 2
GS
mb
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
N-channel 60 V 7.8 mΩ standard level MOSFET
= 50 Ω; unclamped
3
mb
mb
= 25 °C; see
= 25 °C
D
= 92 A;
Figure 1
Figure 1
Graphic symbol
Figure 3
PSMN7R6-60PS
mbb076
G
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
175
175
Version
SOT78
Max
60
60
20
65
92
389
149
92
389
110
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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