SUM110N04-05H-E3 Vishay, SUM110N04-05H-E3 Datasheet - Page 6

• Manufacturer Part Number: SUM110N04-05H-E3
• Description: MOSFET N-CH 40V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110N04-05H-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 6700pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0053 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.3mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110N04-05H-E3; SUM110N04-05H-E3TR

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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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