SPW11N60S5 Infineon Technologies, SPW11N60S5 Datasheet - Page 7

• Manufacturer Part Number: SPW11N60S5
• Description: MOSFET N-CH 600V 11A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW11N60S5

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5.5V @ 500µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000012462; SPW11N60S5; SPW11N60S5IN; SPW11N60S5X; SPW11N60S5XK

Please note the new package dimensions arccording to PCN 2009-134-A
9 Typ. gate charge
V
parameter: I
11 Avalanche SOA
I
par.: T
Rev. 2.4
AR
GS
= f (t
A
= f (Q
V
16
12
10
11
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
10
j
0
≤ 150 °C
SPW11N60S5
0.2 V
0.8 V
AR
-3
Gate
)
10
DS max
DS max
10
D
-2
= 11 A pulsed
)
10
20
T
j (START)
-1
=125°C
10
30
0
10
40
1
10
50
T
2
j (START)
=25°C
nC
Q
t
µs
AR
Gate
10
65
Page 7
4
10 Forward characteristics of body diode
I
parameter: T j , t
12 Avalanche energy
E
par.: I
F
AS
= f (V
mJ
10
10
10
10
350
250
200
150
100
= f ( T
A
50
D
-1
0
2
1
0
20
0
SPW11N60S5
= 5.5 A, V
SD
j
)
)
0.4
40
0.8
p
60
= 10 µs
DD
1.2
T
T
T
T
= 50 V
80
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
100
SPW11N60S5
2
120
2008-02-11
2.4
°C
V
T
V
j
SD
160
3