SPW11N60S5 Infineon Technologies, SPW11N60S5 Datasheet
SPW11N60S5
Specifications of SPW11N60S5
SPW11N60S5
SPW11N60S5IN
SPW11N60S5X
SPW11N60S5XK
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SPW11N60S5 Summary of contents
Page 1
... Operating and storage temperature Rev. 2.4 Please note the new package dimensions arccording to PCN 2009-134-A Ordering Code Marking Q67040-S4239 11N60S5 Symbol uls limited jmax limited tot Page 1 SPW11N60S5 600 Ω R 0.38 DS(on PG-TO247 Value Unit 340 mJ 0 ±20 ± 30 125 W °C -55... +150 2008-02-11 ...
Page 2
... V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =7A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPW11N60S5 Value Unit 20 V/ns Values Unit min. typ. max K 260 °C Values Unit min. typ. max. 600 - - V - 700 - 3.5 4.5 5.5 µ ...
Page 3
... V o(er) GS =0V to 480V o(tr) =350V, V =0/10V d(on =6.8 Ω I =11A d(off =350V, I =11A =350V, I =11A 10V =350V, I =11A V D (plateau) DD oss oss Page 3 SPW11N60S5 Values min. typ. max 1460 - - 610 - - 130 - - 150 225 - while V is rising from while V is rising from 0 to 80% V ...
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... Q di /dt=100A/µ Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n T Page 4 SPW11N60S5 Values min. typ. max 1 650 1105 7.9 Value typ. 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 E xternal H eatsink case am b 2008-02-11 Unit ...
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... Rev. 2.4 Please note the new package dimensions arccording to PCN 2009-134-A 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter 0.01 single pulse Page 5 SPW11N60S5 ) DS =25° 0.001 0. 0 =25° µ 20V 12V 10V 2008-02- ...
Page 6
... Rev. 2.4 Please note the new package dimensions arccording to PCN 2009-134-A 6 Typ. drain-source on resistance R DS(on) parameter mΩ 0 Typ. transfer characteristics parameter 100 °C 180 T j Page 6 SPW11N60S5 = =150° ≥ DS(on)max = 10 µ °C 150 ° 2008-02-11 20V 12V 10V ...
Page 7
... Please note the new package dimensions arccording to PCN 2009-134-A 10 Forward characteristics of body diode parameter Gate 12 Avalanche energy par 350 mJ 250 200 =25° (START) 150 100 µ Page 7 SPW11N60S5 ) µ SPW11N60S5 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1 100 120 2008-02- °C 160 T j ...
Page 8
... Please note the new package dimensions arccording to PCN 2009-134-A 14 Avalanche power losses parameter: E 300 W 200 150 100 100 °C 180 Typ oss DS 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 400 V 600 Page 8 SPW11N60S5 =0.6mJ stored energy oss ) 100 200 300 400 V V 2008-02- 600 DS ...
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... Definition of diodes switching characteristics Rev. 2.4 Please note the new package dimensions arccording to PCN 2009-134-A Page 9 SPW11N60S5 2008-02-11 ...
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G Rev. 2.4 Please note the new package dimensions arccording to PCN 2009-134 ...
Page 11
Rev. 2.4 Please note the new package dimensions arccording to PCN 2009-134-A Page 2008-02-11 ...
Page 12
New package outlines TO-247 Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet Erratum Data ...